Crystal growth kinetics in GeS2 amorphous thin films

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F14%3A39898142" target="_blank" >RIV/00216275:25310/14:39898142 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1007/s10973-014-3764-9" target="_blank" >http://dx.doi.org/10.1007/s10973-014-3764-9</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1007/s10973-014-3764-9" target="_blank" >10.1007/s10973-014-3764-9</a>

Result language
angličtina
Original language name
Crystal growth kinetics in GeS2 amorphous thin films
Original language description
The crystal growth kinetics of germanium disulfide in undercooled melts has been studied by optical microscopy under isothermal conditions. The linear growth kinetics of GeS2 has been observed in the temperature range 672 - 711 K in thin film samples. The activation energy of crystal growth assuming Arrhenius behavior has been determined as E (G) = 166 +/- A 8 kJ mol(-1) for thin film samples. From the dependence of reduced growth rate on undercooling, the interface driven 2-D surface nucleated model was estimated.
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
CF - Physical chemistry and theoretical chemistry
OECD FORD branch
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>S - Specificky vyzkum na vysokych skolach

Publication year
2014
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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