Optical and electrical properties of Sb-rich Sb-Se system thin films for phase change memories

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F12%3A39896000" target="_blank" >RIV/00216275:25310/12:39896000 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Optical and electrical properties of Sb-rich Sb-Se system thin films for phase change memories
Original language description
Materials for phase change memories with better parameters than those, which are already commercially used have been intensively searched. The Sb-rich Sb-Se materials studied in this paper are potential candidates for such a purpose. The bulk samples ofcomposition Sb90Se10, Sb85Se15 and Sb80Se20 were crystalline and consist of Sb and Sb2Se3 phases. The thin films were prepared from bulk powdered samples by flash evaporation. As-deposited films were amorphous. The optical bandgaps of amorphous films were from the range 0.28 to 0.35 eV. The optical bandgaps increased with increasing content of selenium. Values of refractive index were in range 5.37 to 5.75 (? = 1500 nm) for amorphous state and 6.11 to 6.74 for crystalline state. They increased with increasing content of antimony. The values of sheet electrical resistance of as-deposited thin films were about 106 ?/sqr. and 102 ?/sqr. for crystalline films. The crystallization temperature was found in the range 160 170°C and it increased
Czech name
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Czech description
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2012
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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