Physico-chemical properties of Sb-rich (Sb, In) - Te thin films

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F14%3A39898379" target="_blank" >RIV/00216275:25310/14:39898379 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1016/j.jallcom.2014.07.110" target="_blank" >http://dx.doi.org/10.1016/j.jallcom.2014.07.110</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.jallcom.2014.07.110" target="_blank" >10.1016/j.jallcom.2014.07.110</a>

Result language
angličtina
Original language name
Physico-chemical properties of Sb-rich (Sb, In) - Te thin films
Original language description
The phase change materials of the system Sb70?xInxTe30 (x = 0, 7 and 14) were studied. The thin films prepared by thermal flash evaporation were amorphous with high electrical sheet resistance (Rs) (?106 omega/sqr., T = 300 K). When heated, the resistance dropped to 10-102 omega/sqr. due to crystallization of the films. The crystallization temperatures were 113, 158 and 183 °C for Sb70Te30, Sb63In7Te30 and Sb56In14Te30, respectively. The activation energies of crystallization as evaluated by Kissinger'splot were 2.42, 2.72 and 3.15 eV for Sb70Te30, Sb63In7Te30 and Sb56In14Te30, respectively. The optical band gap of amorphous films increases with increasing content of indium from 0.38 to 0.47 eV. Values of refractive index were found in range of 5.43-4.77 (lambda = 1500 nm) for amorphous state and 7.06-5.89 for crystalline state in dependence on composition. They decreased with increasing content of indium.
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
CA - Inorganic chemistry
OECD FORD branch
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Project
<a href="/en/project/EE2.3.20.0254" target="_blank" >EE2.3.20.0254: Research Team for Advanced Non-crystalline Materials</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2014
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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