Physico-chemical properties of Sb-rich Sb-Se system thin films for phase change memories
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F12%3A39896001" target="_blank" >RIV/00216275:25310/12:39896001 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Physico-chemical properties of Sb-rich Sb-Se system thin films for phase change memories
Original language description
The bulk samples of composition Sb90Se10, Sb85Se15 and Sb80Se20 were crystalline and consist of Sb and Sb2Se3 phases. The thin films were prepared from bulk powdered samples by flash evaporation. As-deposited films were amorphous. The optical bandgaps increased with increasing content of selenium. Values of refractive index were in range 5.37 to 5.75 (? = 1500 nm) for amorphous state and 6.11 to 6.74 for crystalline state. Activation energies of electrical conductivity of as-deposited films were in range 0.27 0.29 eV and they increased with increasing content of selenium. Large changes of optical reflectivity and electrical resistance due to crystallization showed that these materials can be potentially applied as active parts for data storage cells.
Czech name
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Czech description
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Classification
Type
O - Miscellaneous
CEP classification
CA - Inorganic chemistry
OECD FORD branch
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Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2012
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů