Photostability of pulsed-laser-deposited AsxTe100-x (x=40, 50, 60) amorphous thin films

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F17%3A39910653" target="_blank" >RIV/00216275:25310/17:39910653 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1364/OL.42.001660" target="_blank" >http://dx.doi.org/10.1364/OL.42.001660</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1364/OL.42.001660" target="_blank" >10.1364/OL.42.001660</a>

Result language
angličtina
Original language name
Photostability of pulsed-laser-deposited AsxTe100-x (x=40, 50, 60) amorphous thin films
Original language description
AsxTe100-x amorphous thin films were fabricated by a pulsed laser deposition technique with the aim of finding photostable layers in as-deposited but preferably in relaxed (annealed) state. Photostability was studied in terms of the films' stability of refractive index and bandgap under near-bandgap light irradiation. As40Te60 and As50Te50 layers were found to be photostable in both as-deposited as well as relaxed states. Moreover, As50Te50 layers present the lowest surface roughness. These characteristics make pulsed-laser-deposited As50Te50 thin films promising for applications in nonlinear optics.
Czech name
—
Czech description
—

Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
—
OECD FORD branch
20506 - Coating and films

Project
<a href="/en/project/GA15-02634S" target="_blank" >GA15-02634S: Amorphous chalcogenide thin films: photoinduced phenomena</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2017
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Similar results(10)