Photostability of pulsed laser deposited amorphous thin films from Ge-As-Te system

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F15%3A39899381" target="_blank" >RIV/00216275:25310/15:39899381 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1038/srep09310" target="_blank" >http://dx.doi.org/10.1038/srep09310</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1038/srep09310" target="_blank" >10.1038/srep09310</a>

Result language
angličtina
Original language name
Photostability of pulsed laser deposited amorphous thin films from Ge-As-Te system
Original language description
Amorphous thin films from Ge-As-Te system were prepared by pulsed laser deposition to study their intrinsic photostability, morphology, chemical composition, structure and optical properties. Photostability of fabricated layers was studied by spectroscopic ellipsometry within as-deposited as well as relaxed (annealed) layers. For irradiation, laser sources operating at three wavelengths in band gap region of the studied materials were employed. The results show that lowest values of photorefraction accompanied with lowest changes of band gap values were exhibited by Ge20As20Te60 thin films, which are therefore considered as the layers with highest photostability in relaxed state. The structure of the films is discussed based on Raman scattering spectroscopy data.
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
JH - Ceramics, fire-proof materials and glass
OECD FORD branch
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2015
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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