Photosensitivity of pulsed laser deposited Ge-Sb-Se thin films

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F15%3A39899380" target="_blank" >RIV/00216275:25310/15:39899380 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1364/OME.5.000781" target="_blank" >http://dx.doi.org/10.1364/OME.5.000781</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1364/OME.5.000781" target="_blank" >10.1364/OME.5.000781</a>

Result language
angličtina
Original language name
Photosensitivity of pulsed laser deposited Ge-Sb-Se thin films
Original language description
Pulsed laser deposition was used to prepare amorphous thin films from (GeSe2)(100-x) (Sb2Se3)(x) system, where x is varying from 0 to 60. To study their photosensitivity under irradiation with energy close to band gap, a comparison of their optical properties (refractive index and band gap energy) before and after irradiation is performed in both, as-deposited and annealed states. In linear regime, annealed films seem to be photostable when x }= 30. In nonlinear regime, highest photoinduced threshold intensity values were found for films with x = 10, 16.7 and x = 30, 40. Thus, the highest photostability in both, linear and nonlinear regimes of irradiation, was observed for layers with x = 30 and 40. The structure of the films is discussed based on Raman scattering spectroscopy results.
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
JH - Ceramics, fire-proof materials and glass
OECD FORD branch
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2015
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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