The function of buffer layer in resistive switching device

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F17%3A39911241" target="_blank" >RIV/00216275:25310/17:39911241 - isvavai.cz</a>

Result on the web

<a href="http://www.chalcogen.ro/291_ZhangB.pdf" target="_blank" >http://www.chalcogen.ro/291_ZhangB.pdf</a>

DOI - Digital Object Identifier

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Result language

angličtina

Original language name

The function of buffer layer in resistive switching device

Original language description

The resistive random access memory is promising to replace the traditional memory technology and the buffer layer plays an important role in chalcogenide based electrolytes. However, there is still lack of convincing experimental result regarding with the mechanism of buffer layer. In this letter, two sets of devices were designed with different position of buffer layer, which proves the buffer layer facilitates the nucleation of Ag filaments.

Czech name

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Czech description

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Type

J_imp - Article in a specialist periodical, which is included in the Web of Science database

CEP classification

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OECD FORD branch

20501 - Materials engineering

Project

<a href="/en/project/TE01020022" target="_blank" >TE01020022: Flexible printed microelectronics based on organic or hybrid materials, FLEXPRINT</a><br>

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year

2017

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Chalcogenide Letters

ISSN

1584-8663

e-ISSN

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Volume of the periodical

14

Issue of the periodical within the volume

8

Country of publishing house

RO - ROMANIA

Number of pages

5

Pages from-to

291-295

UT code for WoS article

000410554700001

EID of the result in the Scopus database

2-s2.0-85028471041