Etching of GeSe2 chalcogenide glass and its pulsed laser deposited thin films in SF6, SF6/Ar and SF6/O2 plasmas
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F20%3A39916707" target="_blank" >RIV/00216275:25310/20:39916707 - isvavai.cz</a>
Result on the web
<a href="https://iopscience.iop.org/article/10.1088/1361-6595/abb0d0" target="_blank" >https://iopscience.iop.org/article/10.1088/1361-6595/abb0d0</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1088/1361-6595/abb0d0" target="_blank" >10.1088/1361-6595/abb0d0</a>
Alternative languages
Result language
angličtina
Original language name
Etching of GeSe2 chalcogenide glass and its pulsed laser deposited thin films in SF6, SF6/Ar and SF6/O2 plasmas
Original language description
Excited species, reactive neutral species and positive ions, produced during the etching of Ge, Se and GeSe2 targets in inductively coupled plasmas, were identified by means of mass spectrometry (MS) and optical emission spectroscopy. The surface of etched Ge39Se61 thin films were analyzed thanks to in situ x-ray photoelectron spectroscopy (XPS) and compared with those of Ge and Se etched samples. In 100% SF6, the adsorption of fluorine atoms forms SeFx(x=2, 4, 6) and GeFx(x=2, 4) stable and volatile products, generating a surface with few residues as interpreted with in situ XPS. The identification of SSeFx+(x=2, 3, 7) ions confirms that sulfur atoms play a role during the etching of Se-containing materials. A 0D kinetic model predicted the evolution of reactive neutral fluxes, ion fluxes and plasma parameters in SF6/Ar plasmas.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
20506 - Coating and films
Result continuities
Project
<a href="/en/project/GA19-24516S" target="_blank" >GA19-24516S: Chalcogenide films doped with rare-earth ions for gas sensing in the mid-infrared spectral region</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2020
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Plasma Sources Science and Technology
ISSN
0963-0252
e-ISSN
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Volume of the periodical
29
Issue of the periodical within the volume
10
Country of publishing house
GB - UNITED KINGDOM
Number of pages
14
Pages from-to
"105006-1"-"105006-14"
UT code for WoS article
000580388600001
EID of the result in the Scopus database
2-s2.0-85094942826