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Surface composition and micromasking effect during the etching of amorphous Ge-Sb-Se thin films in SF6 and SF6 /Ar plasmas

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F21%3A39918123" target="_blank" >RIV/00216275:25310/21:39918123 - isvavai.cz</a>

  • Result on the web

    <a href="https://doi.org/10.1016/j.apsusc.2021.149192" target="_blank" >https://doi.org/10.1016/j.apsusc.2021.149192</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1016/j.apsusc.2021.149192" target="_blank" >10.1016/j.apsusc.2021.149192</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Surface composition and micromasking effect during the etching of amorphous Ge-Sb-Se thin films in SF6 and SF6 /Ar plasmas

  • Original language description

    Ge-Sb-Se thin films were etched using an Inductively Coupled Plasma reactor via fluorine-based chemistry. In a SF6 plasma, etch rate and roughness highlight a micro masking effect which originates from the formation of SbF3, (Se)-Sb-F-x and (Sb)-Se-F species. Systematically, a SF6 plasma is associated with a quasi-isotropic profile and a rough surface. In a SF6/Ar plasma, the impact of pressure and the argon content has been investigated. The addition of argon affects directly the fluorine atom flux and the argon atom flux. It was found that there is a strong coherence between the fluorine atom flux, the proportion of fluorine at the surface and the roughness. Surface is free of fluorinated products for a high percentage of argon (95%) and low-pressures (&lt;4mTorr). A smooth surface and a quasi-vertical profile were achieved in a SF6/Ar plasma with a gas mixture ratio 5/95 and at a pressure of 1.5 mTorr.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database

  • CEP classification

  • OECD FORD branch

    20506 - Coating and films

Result continuities

  • Project

    <a href="/en/project/GA19-24516S" target="_blank" >GA19-24516S: Chalcogenide films doped with rare-earth ions for gas sensing in the mid-infrared spectral region</a><br>

  • Continuities

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Others

  • Publication year

    2021

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Applied Surface Science

  • ISSN

    0169-4332

  • e-ISSN

  • Volume of the periodical

    549

  • Issue of the periodical within the volume

    May

  • Country of publishing house

    NL - THE KINGDOM OF THE NETHERLANDS

  • Number of pages

    9

  • Pages from-to

    149192

  • UT code for WoS article

    000632428500003

  • EID of the result in the Scopus database

    2-s2.0-85101332093