Surface composition and micromasking effect during the etching of amorphous Ge-Sb-Se thin films in SF6 and SF6 /Ar plasmas
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F21%3A39918123" target="_blank" >RIV/00216275:25310/21:39918123 - isvavai.cz</a>
Result on the web
<a href="https://doi.org/10.1016/j.apsusc.2021.149192" target="_blank" >https://doi.org/10.1016/j.apsusc.2021.149192</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.apsusc.2021.149192" target="_blank" >10.1016/j.apsusc.2021.149192</a>
Alternative languages
Result language
angličtina
Original language name
Surface composition and micromasking effect during the etching of amorphous Ge-Sb-Se thin films in SF6 and SF6 /Ar plasmas
Original language description
Ge-Sb-Se thin films were etched using an Inductively Coupled Plasma reactor via fluorine-based chemistry. In a SF6 plasma, etch rate and roughness highlight a micro masking effect which originates from the formation of SbF3, (Se)-Sb-F-x and (Sb)-Se-F species. Systematically, a SF6 plasma is associated with a quasi-isotropic profile and a rough surface. In a SF6/Ar plasma, the impact of pressure and the argon content has been investigated. The addition of argon affects directly the fluorine atom flux and the argon atom flux. It was found that there is a strong coherence between the fluorine atom flux, the proportion of fluorine at the surface and the roughness. Surface is free of fluorinated products for a high percentage of argon (95%) and low-pressures (<4mTorr). A smooth surface and a quasi-vertical profile were achieved in a SF6/Ar plasma with a gas mixture ratio 5/95 and at a pressure of 1.5 mTorr.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
20506 - Coating and films
Result continuities
Project
<a href="/en/project/GA19-24516S" target="_blank" >GA19-24516S: Chalcogenide films doped with rare-earth ions for gas sensing in the mid-infrared spectral region</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2021
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Applied Surface Science
ISSN
0169-4332
e-ISSN
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Volume of the periodical
549
Issue of the periodical within the volume
May
Country of publishing house
NL - THE KINGDOM OF THE NETHERLANDS
Number of pages
9
Pages from-to
149192
UT code for WoS article
000632428500003
EID of the result in the Scopus database
2-s2.0-85101332093