Interferometry and Atomic force microscopy of substrates for optoelectronics proceeded by dry plasma etching

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F14%3APU111398" target="_blank" >RIV/00216305:26220/14:PU111398 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1109/ISOT.2014.76" target="_blank" >http://dx.doi.org/10.1109/ISOT.2014.76</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1109/ISOT.2014.76" target="_blank" >10.1109/ISOT.2014.76</a>

Result language
angličtina
Original language name
Interferometry and Atomic force microscopy of substrates for optoelectronics proceeded by dry plasma etching
Original language description
The paper describes the process of sapphire and silicon carbide substrates preparation by dry plasma etching and its characterization. The study confirms the possibility of using dry plasma etching processes for wide band gape materials treatment, since the condition of the substrate surface is an important parameter for electronic and optoelectronic devices manufacturing. Processed substrates were studied by interferometry to define the etch depth, and by atomic force microscopy to study the topography and statistical analysis of surface roughness before and after etching. The interferometry reveals the dependence of etch rate on the angle between the substrates and defocused beam of argon ions. It is also shown in low scale image that the surface damage occurs after the substrate treatment. But the common large area surface topography indicates the decreasing of roughness. In order to have purely physical etching the argon plasma was used. Thus this combination of methods allows determine optimal conditions of the substrate preparation.
Czech name
—
Czech description
—

Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>S - Specificky vyzkum na vysokych skolach

Publication year
2014
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
2014 International Symposium on Optomechatronic Technologies (ISOT 2014)
ISBN
978-1-4799-6666-0
ISSN
1063-6900
e-ISSN
—
Number of pages
5
Pages from-to
283-287
Publisher name
IEEE Computer Society Press
Place of publication
Los Alamitos, CA, USA
Event location
Seattle
Event date
Sep 5, 2014
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
000393497300068

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