Study of Dry Etching Process for Substrates Preparation
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F13%3APU105512" target="_blank" >RIV/00216305:26220/13:PU105512 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Study of Dry Etching Process for Substrates Preparation
Original language description
This study describes the process of sapphire and silicon carbide substrates preparation by dry plasma etching. Processed substrates was studied by interferometry to define the etch depth and by atomic force microscopy to study the morphology and statistical analysis of surface roughness before and after etching. This allowed determining the optimal conditions of the process.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
<a href="/en/project/ED2.1.00%2F03.0072" target="_blank" >ED2.1.00/03.0072: Centre of sensor, information and communication systems</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2013
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
International Interdisciplinary PhD Workshop 2013
ISBN
978-80-214-4759-2
ISSN
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e-ISSN
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Number of pages
4
Pages from-to
60-64
Publisher name
Brno University of Technology
Place of publication
Brno
Event location
Brno
Event date
Sep 8, 2013
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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