Substrate Preparation for Manufacturing of Aluminum Nitride Layers
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F13%3APU106025" target="_blank" >RIV/00216305:26220/13:PU106025 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Substrate Preparation for Manufacturing of Aluminum Nitride Layers
Original language description
Aluminum nitrides layers prepared on sapphire substrates are examined. The substrate surface was treated by dry plasma etching. The morphology of aluminum nitride thin films was studied by atomic force microscopy. Lateral force atomic force microscopy was used to study the morphology heterogeneity. The dependence of films morphology on the formation conditions has been defined. The objective of the study contributes to the improvement of technological process of dry etching and film deposition.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2013
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
ElectroScope - http://www.electroscope.zcu.cz
ISSN
1802-4564
e-ISSN
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Volume of the periodical
2013
Issue of the periodical within the volume
5
Country of publishing house
CZ - CZECH REPUBLIC
Number of pages
5
Pages from-to
1-5
UT code for WoS article
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EID of the result in the Scopus database
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