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Low-temperature growth of crystalline Tin(II) monosulfide thin films by atomic layer deposition using a liquid divalent tin precursor

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F21%3A39917534" target="_blank" >RIV/00216275:25310/21:39917534 - isvavai.cz</a>

  • Result on the web

    <a href="https://www.sciencedirect.com/science/article/pii/S0169433221012289" target="_blank" >https://www.sciencedirect.com/science/article/pii/S0169433221012289</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1016/j.apsusc.2021.150152" target="_blank" >10.1016/j.apsusc.2021.150152</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Low-temperature growth of crystalline Tin(II) monosulfide thin films by atomic layer deposition using a liquid divalent tin precursor

  • Original language description

    In this study, better-quality stoichiometric SnS thin films were prepared by atomic layer deposition (ALD) using a liquid divalent Sn precursor, N, N&apos;-di-t-butyl-2-methylpropane-1,2-diamido tin(II) [Sn(dmpa)], and H2S. A relatively high growth per ALD cycle (GPC) value of approximately 0.13 nm/cycle was achieved at 125 degrees C. Furthermore, crystalline SnS films could be grown from room temperature (25 degrees C) to a high temperature of 250 degrees C. Density functional theory (DFT) calculations were used to examine the surface reactions and self-limiting nature of the Sn precursor. Mixed phases of cubic (pi) and orthorhombic (o) SnS films were deposited at low temperatures (25-100 degrees C), whereas only the orthorhombic phase prevailed at high growth temperatures (&gt;125 degrees C) based on the complementary results of X-ray diffractometry (XRD), Raman spectroscopy, and X-ray photoelectron spectroscopy (XPS) analyses. The optoelectronic properties of the SnS films were further evaluated by spectroscopic ellipsometry (SE) analysis. The results from the SE analysis supported the observed change from mixed pi-SnS and o-SnS to o-SnS with increasing deposition temperature and allowed the determination of the energy bandgap (similar to 1.1 eV) and a relatively broad semi-transparent window (up to 3000 nm). Overall, this new ALD process for obtaining a good quality SnS is applicable even at room temperature (25 degrees C), and we foresee that this process could be of considerable interest for emerging applications.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database

  • CEP classification

  • OECD FORD branch

    20501 - Materials engineering

Result continuities

  • Project

    <a href="/en/project/LM2018103" target="_blank" >LM2018103: Center of Materials and Nanotechnologies - Research Infrastructure</a><br>

  • Continuities

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Others

  • Publication year

    2021

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Applied Surface Science

  • ISSN

    0169-4332

  • e-ISSN

    1873-5584

  • Volume of the periodical

    565

  • Issue of the periodical within the volume

    November

  • Country of publishing house

    NL - THE KINGDOM OF THE NETHERLANDS

  • Number of pages

    13

  • Pages from-to

    150152

  • UT code for WoS article

    000681177100002

  • EID of the result in the Scopus database

    2-s2.0-85111039786