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Anomalous electrical conductivity change in MoS2 during the transition from the amorphous to crystalline phase

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F23%3A39920416" target="_blank" >RIV/00216275:25310/23:39920416 - isvavai.cz</a>

  • Result on the web

    <a href="https://www.sciencedirect.com/science/article/pii/S0272884222034241?via%3Dihub" target="_blank" >https://www.sciencedirect.com/science/article/pii/S0272884222034241?via%3Dihub</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1016/j.ceramint.2022.09.242" target="_blank" >10.1016/j.ceramint.2022.09.242</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Anomalous electrical conductivity change in MoS2 during the transition from the amorphous to crystalline phase

  • Original language description

    Transition metal dichalcogenides exhibit unique properties, which make them interesting for fundamental studies and for applications in many devices. Here, we report on the anomalous electrical behavior during the amorphous-to-crystal phase transition of MoS2. While crystallization typically results in an increase in conductivity, the situation in MoS2 is opposite. Amorphous MoS2 shows a sheet resistance of 3.2 x 103 omega with the value remaining nearly constant until 200 degrees C, MoS2 samples annealed above 200 degrees C exhibit an unexpected two-step increase in sheet resistance. The first abrupt increase takes place after annealing at temperatures between 300 and 400 degrees C while the second increase occurs after heating to 700 degrees C with typical sheet resistance values of 1.2 x 105 and 8 x 106 omega after heating to 500 degrees C and 900 degrees C, respectively. Using a combination of X-ray photoelectron spectroscopy and X-ray diffraction studies and ab-initio modeling, we argue that the large electrical conductivity observed in amorphous MoS2 is associated with the existence of a large quantity of Mo-Mo homopolar bonds that exceed the percolation threshold. The dramatic increase in the sheet resistivity in the first step is accompanied by the formation of the Mo-S bonds upon the disassociation of homopolar Mo-Mo bonds for a further increase in the sheet resistance upon annealing temperatures of 700 degrees C that can be attributed to the grain boundary formation during crystallization of MoS2 into the 2H layered structure.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database

  • CEP classification

  • OECD FORD branch

    20504 - Ceramics

Result continuities

  • Project

    <a href="/en/project/GA19-17997S" target="_blank" >GA19-17997S: Amorphous to crystal (3D2D) transition in van der Waals bonded chalcogenide materials</a><br>

  • Continuities

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Others

  • Publication year

    2023

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Ceramics International

  • ISSN

    0272-8842

  • e-ISSN

    1873-3956

  • Volume of the periodical

    49

  • Issue of the periodical within the volume

    2

  • Country of publishing house

    GB - UNITED KINGDOM

  • Number of pages

    7

  • Pages from-to

    2619-2625

  • UT code for WoS article

    000905085600001

  • EID of the result in the Scopus database

    2-s2.0-85139711760