Extraneous doping and its necessary preconditions
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F24%3A39921838" target="_blank" >RIV/00216275:25310/24:39921838 - isvavai.cz</a>
Alternative codes found
RIV/68378271:_____/24:00602884
Result on the web
<a href="https://www.sciencedirect.com/science/article/abs/pii/S0927025624003598?via%3Dihub" target="_blank" >https://www.sciencedirect.com/science/article/abs/pii/S0927025624003598?via%3Dihub</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.commatsci.2024.113138" target="_blank" >10.1016/j.commatsci.2024.113138</a>
Alternative languages
Result language
angličtina
Original language name
Extraneous doping and its necessary preconditions
Original language description
Modulation doping in semiconductors has attracted much interest because of its ability to provide a reasonable concentration of free carriers without compromising their mobility, which is significantly reduced by conventional doping. It is very rare to find structures such as Bi2O2Se, which can be thought of as having a separate ""doping part"" (Se) and ""conducting part"" (Bi2O2). Such a structure allows a high carrier mobility at reasonable carrier concentrations. These structures can be viewed as natural electronic composites and this process is often referred to as modulation or delta doping. In this study, we explore and discuss the possibilities of similar but artificial electronic composites - materials doped due to the presence of a foreign phase. Although, such a doping is probably almost ubiquitous in heterogeneous systems, it is very unlikely to provide a reasonably high and homogeneous concentration (10^(18) cm^(-3)) of free charge carriers. Rather, the foreign phase often merely modifies the stoichiometry of the matrix and thus the concentration of native point defects and hence free charge carriers. However, our study shows that although the chance of achieving effective modulation doping is small for 3D structures, it increases significantly for both 1D and 2D structures for low-volume nanoinclusions (<10 nm^(3)). This work also provides guidance on the proper choice of material pairs with respect to modulation doping.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
20500 - Materials engineering
Result continuities
Project
<a href="/en/project/GA22-05919S" target="_blank" >GA22-05919S: Transition metal doped Bi2O2Se layered semiconductors: correlation of transport, magnetic and thermoelectric properties</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2024
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Computational Materials Science
ISSN
0927-0256
e-ISSN
1879-0801
Volume of the periodical
243
Issue of the periodical within the volume
July 2024
Country of publishing house
NL - THE KINGDOM OF THE NETHERLANDS
Number of pages
8
Pages from-to
113138
UT code for WoS article
001249078300001
EID of the result in the Scopus database
2-s2.0-85194375521