Impulse noise in silicon solar cells

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26110%2F01%3APU24208" target="_blank" >RIV/00216305:26110/01:PU24208 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Impulse noise in silicon solar cells

Original language description

Noise measured across forward-biased silicon single-crystal solar cells may serve as a non-destructive reliability indicator. Burst noise, whose source consists of defects in the p-n junction space-charge region, was detected on a number of silicon single-crystal solar cells.

Czech name

Impulse noise in silicon solar cells

Czech description

Impulse noise in silicon solar cells

Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

<a href="/en/project/GA102%2F04%2F0142" target="_blank" >GA102/04/0142: Noise spectroscopy for fast non-destructive testing of solar cells quality, reliability and service lifetime</a><br>

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year

2001

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Microelectronic Reliability

ISSN

0026-2692

e-ISSN

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Volume of the periodical

32

Issue of the periodical within the volume

9

Country of publishing house

BE - BELGIUM

Number of pages

5

Pages from-to

707-711

UT code for WoS article

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EID of the result in the Scopus database

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