A Study of Thin Oxide Films by Ellipsometry and AR XPS

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26210%2F01%3APU22530" target="_blank" >RIV/00216305:26210/01:PU22530 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
A Study of Thin Oxide Films by Ellipsometry and AR XPS
Original language description
In the paper the application of a simple spectroscopic ellipsometer for ex situ and in situ studies on SiO2 films (incl. native oxides on Si) is reported. It is shown that the ellipsometer is a reliable tool for the monitoring of chemical etching of SiO2films with thicknesses above 10 nm. When the films become thinner, the results obtained under atmospheric conditions are strongly influenced by the contamination and roughness of their surface layers. The concentration profiles of these ultrathin fiilms(< 10 nm) were analysed by AR XPS. Further, the ability of the ellipsometer to monitor the removal of native oxides on an Si (111) surface by thermal flashing under UHV conditions is demonstrated as well.
Czech name
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Czech description
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Project
<a href="/en/project/PG98377" target="_blank" >PG98377: Ion-beam technologies and surface/thin film analysis</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year
2001
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
9th European Conference on Applications of Surface and Interface Analysis (ECASIA'01) Book of Abstracts
ISBN
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ISSN
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e-ISSN
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Number of pages
1
Pages from-to
360-360
Publisher name
P. Marcus, A. Galtayries, N. Frémy
Place of publication
Avignon, France
Event location
Avignon
Event date
Sep 30, 2001
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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