Application of Spectroscopic Ellipsometry in Ultrathin Film Analysis

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26210%2F01%3APU23135" target="_blank" >RIV/00216305:26210/01:PU23135 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Application of Spectroscopic Ellipsometry in Ultrathin Film Analysis
Original language description
In the paper the application of a simple spectroscopic ellipsometer for ex situ and in situ studies on SiO2 films (incl. native oxides on Si) is reported. It is shown that the ellipsometer is a reliable tool for the monitoring of chemical etching of SiO2films with thicknesses above 10 nm. When the films become thinner, the results obtained under atmospheric conditions are strongly influenced by the contamination and roughness of their surface layers. The concentration profiles of these ultrathin fiilms(< 10 nm) were analysed by AR XPS. Further, the ability of the ellipsometer to monitor the removal of native oxides on an Si (111) surface by thermal flashing under UHV conditions is demonstrated as well.
Czech name
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Czech description
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Project
<a href="/en/project/PG98377" target="_blank" >PG98377: Ion-beam technologies and surface/thin film analysis</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year
2001
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
Sborník příspěvků konference Nové trendy ve fyzice
ISBN
80-214-1992-X
ISSN
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e-ISSN
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Number of pages
5
Pages from-to
415-419
Publisher name
FEI VUT v Brně
Place of publication
Brno
Event location
Brno, FEI VUT
Event date
Nov 15, 2001
Type of event by nationality
EUR - Evropská akce
UT code for WoS article
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