Low-temperature epitaxial growth of the quaternary wide band gap semiconductor SiCAlN

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26210%2F02%3APU29596" target="_blank" >RIV/00216305:26210/02:PU29596 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Low-temperature epitaxial growth of the quaternary wide band gap semiconductor SiCAlN

Original language description

Two compounds SiC and AlN, normally insoluble in each other below similar to2000 degreesC , are synthesized as a single-phase solid-solution thin film by molecular beam epitaxy at 750 degreesC. The growth of epitaxial SiCAlN films with hexagonal structure takes place on 6H-SiC(0001) substrates. Two structural models for the hexagonal SiCAlN films are constructed based on first-principles total-energy density functional theory calculations, each showing agreement with the experimental microstructures obsserved in cross-sectional transmission electron microscopy images. The predicted fundamental band gap is 3.2 eV for the stoichiometric SiCAlN film.

Czech name

Nízkoteplotní epitaxní růst kvartérních širokogapových SiCAlN

Czech description

Two compounds SiC and AlN, normally insoluble in each other below similar to2000 degreesC , are synthesized as a single-phase solid-solution thin film by molecular beam epitaxy at 750 degreesC. The growth of epitaxial SiCAlN films with hexagonal structure takes place on 6H-SiC(0001) substrates. Two structural models for the hexagonal SiCAlN films are constructed based on first-principles total-energy density functional theory calculations, each showing agreement with the experimental microstructures obsserved in cross-sectional transmission electron microscopy images. The predicted fundamental band gap is 3.2 eV for the stoichiometric SiCAlN film.

Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

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Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2002

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Physical Review Letters

ISSN

0031-9007

e-ISSN

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Volume of the periodical

88

Issue of the periodical within the volume

20

Country of publishing house

US - UNITED STATES

Number of pages

5

Pages from-to

206102-206106

UT code for WoS article

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EID of the result in the Scopus database

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