Low-temperature growth of SiCAlN films of high hardness on Si(111) substrates

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26210%2F02%3APU29597" target="_blank" >RIV/00216305:26210/02:PU29597 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Low-temperature growth of SiCAlN films of high hardness on Si(111) substrates

Original language description

Thin films of metastable SiCAlN solid solution were deposited on Si(111) substrates at 550-750 degreesC, considerably below the miscibility gap of SiC and AlN phases at 1900 degreesC. Our low-temperature growth was based upon thermally activated reactions between a unimolecular precursor H3SiCN and Al atoms from an evaporative cell in a molecular-beam-epitaxy chamber. Characterization of deposited films by spectroscopic and microscopic techniques yielded near-stoichiometric composition throughout the coolumnar wurtzite structure with lattice parameters very close to those of 2H-SiC and hexagonal AlN. An average hardness of 25 GPa was measured for the SiCAlN films, comparable to that measured for sapphire. (C) 2001 American Institute of Physics.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

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Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2002

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Applied Physics Letters

ISSN

0003-6951

e-ISSN

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Volume of the periodical

79

Issue of the periodical within the volume

18

Country of publishing house

US - UNITED STATES

Number of pages

3

Pages from-to

2880-2882

UT code for WoS article

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EID of the result in the Scopus database

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