Analysis of GaN Ultrathin Films grown by Direct Ion Beam Deposition

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26210%2F05%3APU54245" target="_blank" >RIV/00216305:26210/05:PU54245 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Analysis of GaN Ultrathin Films grown by Direct Ion Beam Deposition
Original language description
In the contribution, the in-situ analysis of GaN ultrathin films grown on Si (111) by a low-temperature technique combining a hyperthermal nitrogen ion beam and gallium atomic beam under UHV conditions will be presented. Low energy ions from the beam (10-100 eV) provides an extra kinetic energy on the surface, thus substituting a need for higher temperatures typical for other techniques (e.g. MOCVD). Additionally, this extra energy is responsible for a subsurface growth improving the layer adhesion. Deeposition experiments were carried out at different operation parameters. The dependence on ion-impact energy, substrate temperature and ion-to-atom arrival ratio was examined. The ultrathin films were analyzed using XPS to find their composition, theirstructure- and morphology analyses were carried out by LEED and AFM, respectively. Compared to our previous experiments, the deposition setup was improved by modification of a gas distribution system and by application of nitrogen of high
Czech name
Analýza ultratenkých vrstev GaN připravených metodou přímé depozice inotovým svazkem
Czech description
Příspěvek se zabývá tvorbou a analýzou ultratenkých vrstev GaN připravených metodou přímé depozice.

Publication year
2005
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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