In situ Analysis of Ga-ultra Thin Films by TOF-LEIS

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26210%2F05%3APU54252" target="_blank" >RIV/00216305:26210/05:PU54252 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
In situ Analysis of Ga-ultra Thin Films by TOF-LEIS
Original language description
It is very well known that low energy ion scattering (LEIS) is a surface analytical technique capable of sensing the outermost monolayer on the surface. When a time-of-flight (TOF) detection is used, both scattered ions and neutral particles are detectedand, hence, an information on deeper layers can be obtained as well. The TOF LEIS can thus be used for analysis of ultra thin films and for in-situ monitoring of their growth. In our group a unique ultrahigh vacuum (UHV) apparatus for deposition and in situ analysis of ultrathin films has been developed. Our recently published results on Ga grown on hydrogen terminated Si (111) proved the ability of TOF-LEIS to in-situ monitor the growth mechanism of ultra thin films as well as their thickness. Howeve r, Ga-film behaviour is complicated, it tends to form liquid metal droplets on silicon surfaces. To interpret the TOF-LEIS spectra correctly and to get a realistic view into the growth, computer simulation of ion beam scattering has to be
Czech name
In situ analýza ultratenkých vrstev Ga pomocí ToF LEIS
Czech description
Je prezentována schopnost metody TOF-LEIS sledovat růst tenkých vrstev gallia na substrátech Si(111) a Si(100) a vliv teploty na takto vytvořené vrstvy.

Publication year
2005
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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