Application of ToF LEIS for Monitoring the growth and thermal treatment of Ga ultrathin films

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26210%2F05%3APU54247" target="_blank" >RIV/00216305:26210/05:PU54247 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Application of ToF LEIS for Monitoring the growth and thermal treatment of Ga ultrathin films
Original language description
In the presentation the ability of TOF-LEIS to monitor the growth and thermal treatment of ultra thin films of Ga on Si (111) and Si (100) substrates will be shown. The growth was carried out both at room and enhanced temperatures. As Ga tends to form droplets on these surfaces, the interpretation of TOF-LEIS spectra is not straightforward. The layer thickness of these films can be monitored by the FWHM of Ga peaks. Although in case of low energy ions the ion-surface interactions are more complicated thhan in RBS or MEIS regime (multiple scattering), FWHM dependence on the Ga coverage showed linear behaviour in a range of a few MLs (up to 9 ML for Si (111)) . An useful indicator of the growth mode was the fastness of a Si-peak intensity drop with a Gacoverage. The choice of a substrate treatment was vital for the growth mode of thin Ga layers . To interpret the experimental data and prove these results, complementary analytical methods as AFM, TDS, SR-PES and a computer simulation cod
Czech name
Aplikace ToF LEIS k monitorování růstu a působení teploty na ultratenké vrstvy Ga.
Czech description
Je prezentována schopnost metody TOF-LEIS sledovat růst tenkých vrstev gallia na substrátech Si(111) a Si(100) a vliv teploty na takto vytvořené vrstvy.

Publication year
2005
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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