In situ Analysis of Ga-ultra Thin Films by ToF-LEIS
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26210%2F06%3APU62922" target="_blank" >RIV/00216305:26210/06:PU62922 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
In situ Analysis of Ga-ultra Thin Films by ToF-LEIS
Original language description
In the paper the ability of TOF-LEIS to monitor the growth of ultrathin Ga layers in situ is presented. The FWHM of the Ga peaks in the TOF-LEIS spectra showed a linear dependence on Ga coverage. The analysis of the Ga growth on two Si(111) substrates cleaned in two distinct ways (chemical etching and UHV thermal flashing) revealed changes in the Si peak evolution caused by different growth modes taking place on these two substrates. This has been proved by ex situ AFM measurements as well.
Czech name
In-situ analýza ultratenkých vrstev Ga užitím ToF-LEIS
Czech description
In-situ analýza ultratenkých vrstev Ga užitím ToF-LEIS
Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
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Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2006
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Nuclear Instruments and Methods in Physics Research B
ISSN
0168-583X
e-ISSN
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Volume of the periodical
249
Issue of the periodical within the volume
1-2
Country of publishing house
CZ - CZECH REPUBLIC
Number of pages
4
Pages from-to
318-321
UT code for WoS article
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EID of the result in the Scopus database
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