The Čerenkov limit of Si, GaAs and GaP in electron energy loss spectrometry

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26210%2F15%3APU114597" target="_blank" >RIV/00216305:26210/15:PU114597 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1016/j.ultramic.2015.06.005" target="_blank" >http://dx.doi.org/10.1016/j.ultramic.2015.06.005</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.ultramic.2015.06.005" target="_blank" >10.1016/j.ultramic.2015.06.005</a>

Result language
angličtina
Original language name
The Čerenkov limit of Si, GaAs and GaP in electron energy loss spectrometry
Original language description
Since the advent of monochromated electron energy loss spectrometry (EELS) the experimental detection of band gaps in semiconducting materials is of great importance. In the non-relativistic limit of this technique the onset of the inelastic signal represents the band gap. But due to relativistic energy losses, like Čerenkov losses and the corresponding light guiding modes, appearing at high beam energies the band gap is usually hidden. The highest beam energy, which does not excite relativistic losses in a certain material, is called the Čerenkov limit of the material. In this work the low loss EELS signals of Si, GaAs and GaP are measured at various beam energies and the calculated Čerenkov limits are experimentally confirmed.
Czech name
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Czech description
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Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Publication year
2015
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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