Pressure Sensor with Si3N4 Diaphragm and Optoelectronic Sensing

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F01%3APU22969" target="_blank" >RIV/00216305:26220/01:PU22969 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Pressure Sensor with Si3N4 Diaphragm and Optoelectronic Sensing
Original language description
Sensitive pressure sensor with nitride membrane and optoelectronic read-out system is described. Measured pressure is transformed into thick layer nitride membrane deflection. Nitride membrane serves as a mirror for laser beam and can move reflected laser mark. Mark?s position is sensed using position sensing device ? fotolateral diode. Diode double current signal is amplified and conditioned digitally by ADuC 812 microcomputer. This one chip microcomputer provides an IEEE 1451.2 interface.
Czech name
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Czech description
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Project
<a href="/en/project/GA102%2F00%2F0938" target="_blank" >GA102/00/0938: Pressure analyser</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2001
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
TEMI 2001 trends in electrical Measurement and Instrumentation
ISBN
972-98115-4-7
ISSN
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e-ISSN
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Number of pages
3
Pages from-to
327-329
Publisher name
Instituto de Telecomunicacoes
Place of publication
Lisbon, Portugal
Event location
Lisbon
Event date
Sep 13, 2001
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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