Optoelectronic pressure sensor with Si.sub.3./sub.N.sub.4./sub. diaphragm.
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68081731%3A_____%2F01%3A12020160" target="_blank" >RIV/68081731:_____/01:12020160 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Optoelectronic pressure sensor with Si.sub.3./sub.N.sub.4./sub. diaphragm.
Original language description
Sensitive pressure sensor with nitride membrane and optoelectronic read-out system is described. Measured pressure is transformed into the deformation of a thick layer nitride membrane. Nitride membrane creates a mirror for laser beam and moves with reflected laser mark. Its position is sensed via a position sensing device - photo lateral diode. Diode double current signal is amplified and conditioned digitally by ADuC 812 microcomputer. This one chip provides an IEEE 1451.2 interface.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
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Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2001
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
16th international conference on production research.
ISBN
80-02-01438-3
ISSN
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e-ISSN
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Number of pages
5
Pages from-to
"X1"-"X5"
Publisher name
ČSVTS
Place of publication
Praha
Event location
Praha [CZ]
Event date
Jul 29, 2001
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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