MOSFET Modeling for Curcuit Simulations

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F02%3APU29227" target="_blank" >RIV/00216305:26220/02:PU29227 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

MOSFET Modeling for Curcuit Simulations

Original language description

In this paper an overview of MOSFET modeling circuit simulation is presented. After discussing some of the implications of analog and low-power applications, the history of the MOS models comonly used in SPICE-like circuit simulators is presented, followed by a discussion of the evolution of strategies for modeling the geometry dependence of MOSFET characteristics. The growth of complexity and requirements for future MOS models are also considered.

Czech name

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Czech description

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Type

D - Article in proceedings

CEP classification

JA - Electronics and optoelectronics

OECD FORD branch

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Project

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Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2002

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection

ELECTRONIC DEVICES AND SYSTEMS 02 - PROCEEDINGS

ISBN

80-214-2180-0

ISSN

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e-ISSN

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Number of pages

4

Pages from-to

259-262

Publisher name

Vysoké učení technické v Brně

Place of publication

Brno

Event location

Brno

Event date

Sep 9, 2002

Type of event by nationality

EUR - Evropská akce

UT code for WoS article

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