MOSFETs’ Electrical Performance in the 160-nm BCD Technology Process With the Diamond Layout Shape
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F20%3A00342237" target="_blank" >RIV/68407700:21230/20:00342237 - isvavai.cz</a>
Result on the web
<a href="https://doi.org/10.1109/TED.2020.3000744" target="_blank" >https://doi.org/10.1109/TED.2020.3000744</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1109/TED.2020.3000744" target="_blank" >10.1109/TED.2020.3000744</a>
Alternative languages
Result language
angličtina
Original language name
MOSFETs’ Electrical Performance in the 160-nm BCD Technology Process With the Diamond Layout Shape
Original language description
This article introduces an innovative approach that describes the drain–source current improvements of MOS transistors. It is based on the geometrical modification of MOSFET’s channel from a rectangular layout shape (RLS) into a diamond layout shape (DLS). In this way, the drain–source current enhancement is increased up to 11% for the DLS MOS transistors with an effective aspect ratio (W/L)eff equal to 2.0 and an angle set to 80. Moreover, we present the comparison of 3-D TCAD simulations data, analytical model data based on Schwarz–Christoffel transformation (SCT), and measurement data given by the measurement of the MOS transistors fabricated in the Bipolar- CMOS-DMOS (BCD) 160-nm technology process. For this purpose, there have been fabricated 1124 samples, which were proportionally divided into RLS MOSFETs and DLS MOSFETs with the angles equal to 120, 100, and 80. For all studied aspect ratios, the presented model has an excellent analytic description in comparison with the 3-D TCAD simulation results with an error lower than 3%. So, it proves the quality of the analytical model based on the SCT approach and it is the recommended approach to use also for modeling other MOSFET gate layout shapes.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
20201 - Electrical and electronic engineering
Result continuities
Project
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Continuities
S - Specificky vyzkum na vysokych skolach
Others
Publication year
2020
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
IEEE Transactions on Electron Devices
ISSN
0018-9383
e-ISSN
1557-9646
Volume of the periodical
67
Issue of the periodical within the volume
8
Country of publishing house
US - UNITED STATES
Number of pages
8
Pages from-to
3270-3277
UT code for WoS article
000552976100040
EID of the result in the Scopus database
2-s2.0-85089354475