Comparison of Measured Data Given by Automatized Measurement Methodology with the Analytical Expression of DLS MOSFET
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F20%3A00342240" target="_blank" >RIV/68407700:21230/20:00342240 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.23919/AE49394.2020.9232796" target="_blank" >http://dx.doi.org/10.23919/AE49394.2020.9232796</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.23919/AE49394.2020.9232796" target="_blank" >10.23919/AE49394.2020.9232796</a>
Alternative languages
Result language
angličtina
Original language name
Comparison of Measured Data Given by Automatized Measurement Methodology with the Analytical Expression of DLS MOSFET
Original language description
This paper introduces the latest modern automatized advanced measurement flow of the diamond layout shape MOS transistors (DLS MOSFETs) as well as the rectangular layout shape (RLS) MOSFETs directly on a wafer. There are presented photos of the DLS MOSFET, from the highest level of the wafer down to the lowest level of the wafer, where each photo is individually commented. The next part of this article presents each item of the proposed measurement flow, such as an air compressor, temperature forcing system, probe cards, and precision semiconductor parameter analyzer. Also, there is shown, a photo of the probe card used for the measurement, as well as planning of its needles. Besides others, there is describe four-points measurement strategy, and the last part of this paper recommends the minimum number of measurements in order to obtain relevant data. Finally, the measured data is compared with a theoretic analytical expression
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
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OECD FORD branch
20201 - Electrical and electronic engineering
Result continuities
Project
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Continuities
S - Specificky vyzkum na vysokych skolach
Others
Publication year
2020
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
2020 International Conference on Applied Electronics
ISBN
978-80-261-0891-7
ISSN
1803-7232
e-ISSN
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Number of pages
6
Pages from-to
3-8
Publisher name
Západočeská univerzita v Plzni
Place of publication
Plzeň
Event location
Plzeň
Event date
Sep 8, 2020
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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