Precise Model of the Effective Threshold Voltage Changes in the DLS MOSFETs for Different Gate Angles Compared with Measured Data

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F22%3A00373279" target="_blank" >RIV/68407700:21230/22:00373279 - isvavai.cz</a>

Result on the web

<a href="https://doi.org/10.1109/AE54730.2022.9920095" target="_blank" >https://doi.org/10.1109/AE54730.2022.9920095</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1109/AE54730.2022.9920095" target="_blank" >10.1109/AE54730.2022.9920095</a>

Result language

angličtina

Original language name

Precise Model of the Effective Threshold Voltage Changes in the DLS MOSFETs for Different Gate Angles Compared with Measured Data

Original language description

This paper presents an interesting phenomenon related to the effective threshold voltage changes (δVth,eff) in the diamond layout shape MOS transistors (DLS MOSFETs). Besides it, its analytical expression is presented here for the first time. The analytical approximative expression has been defined based on the results of the 3-D TCAD simulations for the different effective aspect ratio (W/L)eff and different angle α of DLS MOSFET. The effective aspect ratio has been set to 2.0, 1.5, 1.0, 0.5 with the angle α varied from 180° to 80° with the step 20°. Furthermore, for purpose to verify the 3-D TCAD simulation results and measurement results, 1 124 samples were fabricated, which were proportionally divided into rectangle layout shape (RLS) MOSFETs and DLS MOSFETs with the angles α equal to 120°, 100°, and 80°. All the samples have been fabricated in the 160 nm BCD technology process. The mentioned phenomenon described by the proposed expression fits the measured data with a very high level of accuracy equal to 99.995 %. Thus, the presented analytical expression proves its quality. Thanks to the high level of the expression quality, the given expression is recommended to use for the analog designs with high-level precision requests and DLS MOSFET components.

Czech name

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Czech description

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Type

D - Article in proceedings

CEP classification

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OECD FORD branch

20201 - Electrical and electronic engineering

Project

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Continuities

S - Specificky vyzkum na vysokych skolach

Publication year

2022

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection

2022 International Conference on Applied Electronics (AE)

ISBN

978-1-6654-9481-6

ISSN

1803-7232

e-ISSN

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Number of pages

6

Pages from-to

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Publisher name

IEEE Xplore

Place of publication

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Event location

Plzeň

Event date

Sep 6, 2022

Type of event by nationality

WRD - Celosvětová akce

UT code for WoS article

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