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Influence od Contact Electrode on Thick Film Resistors Noice and Nonlinerity

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F02%3APU30294" target="_blank" >RIV/00216305:26220/02:PU30294 - isvavai.cz</a>

  • Result on the web

  • DOI - Digital Object Identifier

Alternative languages

  • Result language

    angličtina

  • Original language name

    Influence od Contact Electrode on Thick Film Resistors Noice and Nonlinerity

  • Original language description

    The noise spectroscopy measurement and third harmonic testing was used to investigate effect of the contact electrode geometry and material composition on the thick film resistor quality. It was proved experimentally that noise spectral density is proportional to electric field intensity, while third harmonic voltage depends on the third power of electric field intensity or current density. Modelling of the current distribution for two different shapes of metallic contact cross sections was performed. TThe electrode geometry plays dominant role for current distribution. The lower value of metallic contact angle, the higher current density peak appears in the vicinity of the contact edge. Effect of cracks, which are found near the contact electrode, also play important role in current distribution, noise sources and non-linearity.

  • Czech name

  • Czech description

Classification

  • Type

    D - Article in proceedings

  • CEP classification

    JA - Electronics and optoelectronics

  • OECD FORD branch

Result continuities

  • Project

    <a href="/en/project/ME%20244" target="_blank" >ME 244: Noise spectroscopy for quality and reliability asessment of thick film resistors</a><br>

  • Continuities

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Others

  • Publication year

    2002

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Article name in the collection

    Proc. of 38th International Conference on Microelectronics, Devices and Materials

  • ISBN

    961-91023-0-4

  • ISSN

  • e-ISSN

  • Number of pages

    7

  • Pages from-to

    245-251

  • Publisher name

    Neuveden

  • Place of publication

    Lipica, Slonenia

  • Event location

    Lipica

  • Event date

    Oct 9, 2002

  • Type of event by nationality

    WRD - Celosvětová akce

  • UT code for WoS article