TCAD Tools in Device Characterization and Parameter Extraction

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F02%3APU30434" target="_blank" >RIV/00216305:26220/02:PU30434 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
TCAD Tools in Device Characterization and Parameter Extraction
Original language description
Simulation based (process-device) extraction methodology brings advantages both in cost savings and in reducing time-to-market. Instead of enduring the high cost and long time required for silicon fabrication, device designers obtain almost immediately the SPICE model parameters that result from "what if" process change analysis. This provokes a constantly growing need for complete device characterization and parameter extraction on the basis of simulated data provided by process and device simulators.Parameter extractors are those tools that link process-device simulation to circuit simulation and the main goal is to extract device model parameter values from front-end technological parameters. At present the exploitation of the integrated TCAD toolsto solve this problem is under study. The approaches to integrate process, device and circuit simulation TCAD tools are reviewed and examples of parameter extractors of leading TCAD vendors are presented.
Czech name
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Czech description
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Publication year
2002
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
Socrates Workshop 2002 - Proceedings. Intensive Training Programme in Electronic System Design
ISBN
80-214-2217-3
ISSN
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e-ISSN
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Number of pages
6
Pages from-to
132-137
Publisher name
Ing. Z. Novotný, Brno 2002
Place of publication
Brno
Event location
Chania, Crete
Event date
Sep 2, 2002
Type of event by nationality
EUR - Evropská akce
UT code for WoS article
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