Charge Carrier Transport in Polymer-Based Thick Resistive Films
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F05%3APU52121" target="_blank" >RIV/00216305:26220/05:PU52121 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Charge Carrier Transport in Polymer-Based Thick Resistive Films
Original language description
We proposed the model for the charge carrier transport in the polymer based thick film structures. The model is based on the assumption that the electric charge transport is due to the electron tunnelling through the barrier between carbon and graphite particles. The main noise and non-linearity sources in polymer based thick film layer are considered to be the contacts between conducting grains. On the basis of this model the sheet resistance and effective number of electrons acting as mobility fluctuaators in one point contact can be calculated. From the low frequency noise measurements we can estimate the number of point contacts in the thick film resistive layer. The influence of the polymer vehicle and thermal treatment on the thick film structureis characterized by noise and nonlinearity measurements. During the thermal treatment the conductivity of the resistive layer is changed due to the change of number of contacts between conducting grains - the distance between conducting g
Czech name
Transport náboje v tlustých vrstvách na bázi polymerů
Czech description
We proposed the model for the charge carrier transport in the polymer based thick film structures. The model is based on the assumption that the electric charge transport is due to the electron tunnelling through the barrier between carbon and graphite particles. The main noise and non-linearity sources in polymer based thick film layer are considered to be the contacts between conducting grains. On the basis of this model the sheet resistance and effective number of electrons acting as mobility fluctuaators in one point contact can be calculated. From the low frequency noise measurements we can estimate the number of point contacts in the thick film resistive layer. The influence of the polymer vehicle and thermal treatment on the thick film structureis characterized by noise and nonlinearity measurements. During the thermal treatment the conductivity of the resistive layer is changed due to the change of number of contacts between conducting grains - the distance between conducting g
Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
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Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2005
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Capacitor and Resistor Technology
ISSN
0887-7491
e-ISSN
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Volume of the periodical
2005
Issue of the periodical within the volume
10
Country of publishing house
US - UNITED STATES
Number of pages
6
Pages from-to
93-98
UT code for WoS article
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EID of the result in the Scopus database
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