Charge carrier transport and noise in polymer based thick films

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F06%3APU58473" target="_blank" >RIV/00216305:26220/06:PU58473 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Charge carrier transport and noise in polymer based thick films

Original language description

We have studied thick film layers made from different polymer vehicles and three types of conducting particles - silver, carbon, graphite, and their mixture. We proposed the point contact model for the charge carrier transport in the polymer based thickfilm structures. The model is based on the assumption, that the charge transport is due to the electrons thermally emitted from a metallic grain and that their transfer to another grain has a main component given by ballistic transport [1] and tunneling[2] through the barrier between these two particles. Main noise and non-linearity sources in polymer based thick film layer are considered to be the contacts between conducting grains. On the basis of our model the sheet resistance and effective number of electrons acting as mobility fluctuators in one point contact can be calculated. From the low frequency noise measurements we can estimate the number of point contacts in the thick film resistive layer. The influence of the polymer vehi

Czech name

Transport náboje a šum v tlustých vrstvách na bázi polymeru

Czech description

We have studied thick film layers made from different polymer vehicles and three types of conducting particles - silver, carbon, graphite, and their mixture. We proposed the point contact model for the charge carrier transport in the polymer based thickfilm structures. The model is based on the assumption, that the charge transport is due to the electrons thermally emitted from a metallic grain and that their transfer to another grain has a main component given by ballistic transport [1] and tunneling[2] through the barrier between these two particles. Main noise and non-linearity sources in polymer based thick film layer are considered to be the contacts between conducting grains. On the basis of our model the sheet resistance and effective number of electrons acting as mobility fluctuators in one point contact can be calculated. From the low frequency noise measurements we can estimate the number of point contacts in the thick film resistive layer. The influence of the polymer vehi

Type

D - Article in proceedings

CEP classification

JA - Electronics and optoelectronics

OECD FORD branch

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Project

<a href="/en/project/GA102%2F05%2F2095" target="_blank" >GA102/05/2095: Noise sources in semiconductor materials and devices</a><br>

Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2006

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection

4th European Microelectronics and Packaging Symposium with Table-Top Exhibition - Proceedings

ISBN

961-91023-4-7

ISSN

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e-ISSN

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Number of pages

6

Pages from-to

15-20

Publisher name

MIDEM

Place of publication

Slovinsko

Event location

Terme Catez

Event date

May 21, 2006

Type of event by nationality

WRD - Celosvětová akce

UT code for WoS article

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