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ANALYSIS OF CONTACT QUALITY IN CDTE DETECTORS

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F06%3APU57360" target="_blank" >RIV/00216305:26220/06:PU57360 - isvavai.cz</a>

  • Result on the web

  • DOI - Digital Object Identifier

Alternative languages

  • Result language

    angličtina

  • Original language name

    ANALYSIS OF CONTACT QUALITY IN CDTE DETECTORS

  • Original language description

    Contact metal - semiconductor is an obligatory element of all semiconductor devices. Energy band diagrams of the CdTe-metal interface have been modeled on the basis of the semiconductor parameters. Energy band diagram shows position of the Fermi level inmetal and bottom of conductivity band Ec, valence band ceiling Ev, Fermi level, and impurity activation energy in the semiconductor. In the area of CdTe-metal interface arises a contact field. It causes bending of the energy bands in the depleted zooneof the semiconductor. A series of measurements of VA characteristics at various temperatures was carried out in the dark and the changes of the current function with temperature were determined.

  • Czech name

    Analýza kvality kontaktů v CdTe detektorech

  • Czech description

    Contact metal - semiconductor is an obligatory element of all semiconductor devices. Energy band diagrams of the CdTe-metal interface have been modeled on the basis of the semiconductor parameters. Energy band diagram shows position of the Fermi level inmetal and bottom of conductivity band Ec, valence band ceiling Ev, Fermi level, and impurity activation energy in the semiconductor. In the area of CdTe-metal interface arises a contact field. It causes bending of the energy bands in the depleted zooneof the semiconductor. A series of measurements of VA characteristics at various temperatures was carried out in the dark and the changes of the current function with temperature were determined.

Classification

  • Type

    D - Article in proceedings

  • CEP classification

    JA - Electronics and optoelectronics

  • OECD FORD branch

Result continuities

  • Project

  • Continuities

    Z - Vyzkumny zamer (s odkazem do CEZ)

Others

  • Publication year

    2006

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Article name in the collection

    Student EEICT 2006

  • ISBN

    80-214-3162-8

  • ISSN

  • e-ISSN

  • Number of pages

    5

  • Pages from-to

    102-106

  • Publisher name

    Ing. Zdeněk Novotný, CSc., Brno, Ondráčkova 105

  • Place of publication

    Brno, česká republika

  • Event location

    Brno

  • Event date

    Apr 27, 2006

  • Type of event by nationality

    CST - Celostátní akce

  • UT code for WoS article