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Selfordered Hexagonal Pore Structure of Anodized Alumina Depposited on Si Substrate

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F06%3APU59865" target="_blank" >RIV/00216305:26220/06:PU59865 - isvavai.cz</a>

  • Result on the web

  • DOI - Digital Object Identifier

Alternative languages

  • Result language

    čeština

  • Original language name

    Selfordered Hexagonal Pore Structure of Anodized Alumina Depposited on Si Substrate

  • Original language description

    The main idea of this work is to prepare self ordered hexagonal pore structure anodization of aluminum layer. Anodized alumina is used as a mask for deposition of ordered nanowires or nanotubes. Diameters of pores are 20-80 nm depending on used electrolyte. The interpore distances are between 20-120 nm. Fabrication of anodized alumina is not simple process. Many factors affect successful preparation of ordered structure like the temperature, crystal structure of aluminum film and the concentration of used solution.

  • Czech name

    Selfordered Hexagonal Pore Structure of Anodized Alumina Depposited on Si Substrate

  • Czech description

    The main idea of this work is to prepare self ordered hexagonal pore structure anodization of aluminum layer. Anodized alumina is used as a mask for deposition of ordered nanowires or nanotubes. Diameters of pores are 20-80 nm depending on used electrolyte. The interpore distances are between 20-120 nm. Fabrication of anodized alumina is not simple process. Many factors affect successful preparation of ordered structure like the temperature, crystal structure of aluminum film and the concentration of used solution.

Classification

  • Type

    D - Article in proceedings

  • CEP classification

    JB - Sensors, detecting elements, measurement and regulation

  • OECD FORD branch

Result continuities

  • Project

    <a href="/en/project/GP102%2F04%2FP162" target="_blank" >GP102/04/P162: Micro- and nanomachining structures fabricated by microelectronics technologies</a><br>

  • Continuities

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Others

  • Publication year

    2006

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Article name in the collection

    Proceedings of the 12. Conference STUDENT EEICT 2006, Volume 2

  • ISBN

    80-214-3161-X

  • ISSN

  • e-ISSN

  • Number of pages

    3

  • Pages from-to

    130-132

  • Publisher name

    Ing. Zdeněk Novotný CSc, Ondráčkova 105, Brno

  • Place of publication

    Brno, Česká Republika

  • Event location

    Brno

  • Event date

    Apr 27, 2006

  • Type of event by nationality

    CST - Celostátní akce

  • UT code for WoS article