Polymer Based Thick Films - Material Quality and Interface Resistance Evaluation

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F06%3APU63784" target="_blank" >RIV/00216305:26220/06:PU63784 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Polymer Based Thick Films - Material Quality and Interface Resistance Evaluation

Original language description

Abstract:We have studied the properties of polymer based thick film layers. The samples were made using different resistive pastes and dipping silvers. The composite of carbon and graphite (C/Gr) conducting particles suspended in different polymer vehicles were used for the thick film resistive layers preparation. Interface resistance Rc created between dipping silver (DiAg) contact layer and resistive layer was determined from the surface potential distribution measurements and its value was less than1% of total sample resistance. The temperature dependence of conductivity was measured in the temperature range 110 to 310 K. VA characteristic is linear in both electric field orientations. At the temperature 308 K the VA characteristic is very near tothat on 110 K, but the resistivity temperature coefficient has opposite sign. Minimum resistance value is at temperature 230 K. For increasing temperature the sample resistance increases with temperature: R ~Ta, where a = 0.5 to 1.5. For

Czech name

Vyhodnocení kvality materiálu a odporu mezi vrstvami u tlustovrtvových resistorů na bázi polymerů

Czech description

Abstract:We have studied the properties of polymer based thick film layers. The samples were made using different resistive pastes and dipping silvers. The composite of carbon and graphite (C/Gr) conducting particles suspended in different polymer vehicles were used for the thick film resistive layers preparation. Interface resistance Rc created between dipping silver (DiAg) contact layer and resistive layer was determined from the surface potential distribution measurements and its value was less than1% of total sample resistance. The temperature dependence of conductivity was measured in the temperature range 110 to 310 K. VA characteristic is linear in both electric field orientations. At the temperature 308 K the VA characteristic is very near tothat on 110 K, but the resistivity temperature coefficient has opposite sign. Minimum resistance value is at temperature 230 K. For increasing temperature the sample resistance increases with temperature: R ~Ta, where a = 0.5 to 1.5. For

Type

D - Article in proceedings

CEP classification

JA - Electronics and optoelectronics

OECD FORD branch

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Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2006

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection

XXX International Conference of IMAPS Poland Chapter Proceedings

ISBN

83-917701-3-3

ISSN

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e-ISSN

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Number of pages

8

Pages from-to

95-102

Publisher name

Institute of Electron Technology - Cracow Division

Place of publication

Krakow, Poland

Event location

Krakow

Event date

Sep 24, 2006

Type of event by nationality

EUR - Evropská akce

UT code for WoS article

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