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Charge Carriers Transport and Noise in Niobium Oxide and Tantalum Capacitors

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F06%3APU63882" target="_blank" >RIV/00216305:26220/06:PU63882 - isvavai.cz</a>

  • Result on the web

  • DOI - Digital Object Identifier

Alternative languages

  • Result language

    angličtina

  • Original language name

    Charge Carriers Transport and Noise in Niobium Oxide and Tantalum Capacitors

  • Original language description

    The NbO and Ta capacitor active region quality assessment is based on the evaluation of VA and noise characteristics and theirs temperature dependences. A physical model of a solid niobium and tantalum capacitor is based upon the metal-insulator-semiconductor (MIS) structure. For the normal mode and low electric field the current transport is described by the Poole-Frenkel mechanism and the current noise spectral density is given by the superposition of shot and g-r noise. For the high electric field the current transport is described by tunnelling and the current noise spectral density is 1/f type. Quantum transition diagram describing these mechanisms is shown. The leakage current temperature dependence for the low electric field gives the deep levelactivation energy Ea = 0.4 eV.

  • Czech name

    Transport náboje a šum v niob-oxidových a tantalových kondenzátorech

  • Czech description

    The NbO and Ta capacitor active region quality assessment is based on the evaluation of VA and noise characteristics and theirs temperature dependences. A physical model of a solid niobium and tantalum capacitor is based upon the metal-insulator-semiconductor (MIS) structure. For the normal mode and low electric field the current transport is described by the Poole-Frenkel mechanism and the current noise spectral density is given by the superposition of shot and g-r noise. For the high electric field the current transport is described by tunnelling and the current noise spectral density is 1/f type. Quantum transition diagram describing these mechanisms is shown. The leakage current temperature dependence for the low electric field gives the deep levelactivation energy Ea = 0.4 eV.

Classification

  • Type

    D - Article in proceedings

  • CEP classification

    JA - Electronics and optoelectronics

  • OECD FORD branch

Result continuities

  • Project

    <a href="/en/project/GA102%2F05%2F2095" target="_blank" >GA102/05/2095: Noise sources in semiconductor materials and devices</a><br>

  • Continuities

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Others

  • Publication year

    2006

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Article name in the collection

    EDS '06 IMAPS CS International Conference Proceedings

  • ISBN

    80-214-3246-2

  • ISSN

  • e-ISSN

  • Number of pages

    10

  • Pages from-to

    154-163

  • Publisher name

    Ing. Zdeněk Novotný CSc.

  • Place of publication

    Brno, ČR

  • Event location

    Brno

  • Event date

    Sep 14, 2006

  • Type of event by nationality

    WRD - Celosvětová akce

  • UT code for WoS article