Charge Carriers Transport and Noise of Niobium Capacitors

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F02%3APU30749" target="_blank" >RIV/00216305:26220/02:PU30749 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Charge Carriers Transport and Noise of Niobium Capacitors
Original language description
A charge carriers transport mechanism and low frequency noise analysis has been performed on niobium capacitors to determine the mechanism of current flow and current noise sources, both in normal and reverse directions. The model of this MIS structure can be used to give a physical interpretation of the niobium capacitor characteristics and temperature dependences. In normal mode the V.A. characteristic can be approximated by Poole-Frenkel emission. In reverse mode two regions can be distinguished wiith respect to applied voltage. For applied voltage less than 0.5 V the V.A. characteristic can be approximated by exponential dependence of current on applied voltage. The noise spectral density varies approximately with the square of the leakage current,but it was frequently observed that the noise spectral density is related to the ?excess? component of the leakage current. This excess current is most likely to be localised in discrete regions, flaws or defects. The temperature depende
Czech name
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Czech description
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Publication year
2002
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
CARTS-EUROPE 2002 Proceedings, 16th European Passive Components Conference
ISBN
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ISSN
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e-ISSN
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Number of pages
5
Pages from-to
32-36
Publisher name
Electronic Components Institute Internationale Ltd.
Place of publication
Swindon, England
Event location
Port St. Laurent, Francie
Event date
Oct 14, 2002
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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