Modeling of quantization effects in NMOSFET channel
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F07%3APU71778" target="_blank" >RIV/00216305:26220/07:PU71778 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Modeling of quantization effects in NMOSFET channel
Original language description
In short channel NMOSFET simulations, the threshold voltage is increased if the quantization effects are present. The contribution describes the influence of quantum mechanical size quantization effects in NMOSFET channel on the electrical properties ofNMOS transistor. Normal drift diffusion simulation (neglecting quantum effects), simulations including quantum correction models (van Dort model, the density gradient model) and the simulation including direct solution of the Schroedinger equation are compared. The simulations are run under GENESISe. The tool flow starts with the device editor MDRAW followed by device simulator DESSIS and visualization and extraction tools TECPLOT and INSPECT.
Czech name
Modelování kvantizačních jevů v NMOSFET kaníle
Czech description
popis
Classification
Type
D - Article in proceedings
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
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Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2007
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Proceedings of Electronic Devices and Systems EDS`07 IMAPS CS International Conference 2007
ISBN
978-80-214-3470-7
ISSN
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e-ISSN
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Number of pages
5
Pages from-to
442-446
Publisher name
Nakl. Novotný
Place of publication
Brno
Event location
BRNO
Event date
Sep 20, 2007
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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