TCAD simulation using van Dort quantum correction model

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F07%3APU71777" target="_blank" >RIV/00216305:26220/07:PU71777 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
TCAD simulation using van Dort quantum correction model
Original language description
Some features of current MOSFETs (oxide thickness, channel width) have reached quantum mechanical length scales. Therefore, the wave nature of electrons and holes can no longer be neglected. The contribution deals with TCAD simulation of quantum corrections (QC) in the MOSFET channel. This effect is described by the phenomenological van Dort model, which accounts for the size quantization by increasing the effective band gap in the high-field region. The method to activate the van Dort model in DESSIS and to extract the threshold voltage increase and the subthreshold current reduction due to QC is described. The simulations are run under GENESISe. The tool flow starts with the device editor MDRAW followed by device simulator DESSIS and visualization and extraction tool INSPECT.
Czech name
TCAD simulace s využitím van Dortova kvantově korekčního modelu
Czech description
popis

Publication year
2007
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
Proceedings of Electronic Devices and Systems EDS`07 IMAPS CS International Conference 2007
ISBN
978-80-214-3470-7
ISSN
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e-ISSN
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Number of pages
5
Pages from-to
437-441
Publisher name
nakl. Novotný
Place of publication
Brno
Event location
BRNO
Event date
Sep 20, 2007
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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