BODY EFFECT SIMULATION BODY EFFECT SIMULATION
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F08%3APU78838" target="_blank" >RIV/00216305:26220/08:PU78838 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
BODY EFFECT SIMULATION BODY EFFECT SIMULATION
Original language description
The threshold voltage of a MOSFET can be shifted by biasing the substrate. This is known as 'body effect.' The contribution deals with TCAD simulation of this effect. The method to extract the threshold voltage shift due to body effect is described. Tendifferent NMOSFET device simulations generate ten transfer characteristics (curves of drain current vs. gate-source voltage) in order to illustrate threshold voltage shifts for defined substrate and drain voltages. The simulations are run under GENESISe.The tool flow starts with the device editor MDRAW followed by device simulator DESSIS. TECPLOT and INSPECT are used to visualize the simulated structure and the simulated curves.
Czech name
Simulace body efektu
Czech description
popis
Classification
Type
D - Article in proceedings
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
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Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2008
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Proceedings of Electronic Devices and Systems EDS`08 IMAPS CS International Conference 2008
ISBN
978-80-214-3717-3
ISSN
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e-ISSN
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Number of pages
5
Pages from-to
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Publisher name
Nakl. Novotný
Place of publication
Brno
Event location
Brno
Event date
Sep 10, 2008
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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