Simulation of the Electrical Properties of a Graphene Monolayer Field Effect Transistor

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F24%3APU155971" target="_blank" >RIV/00216305:26620/24:PU155971 - isvavai.cz</a>
Result on the web
<a href="https://ieeexplore.ieee.org/document/10652423" target="_blank" >https://ieeexplore.ieee.org/document/10652423</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1109/IVNC63480.2024.10652423" target="_blank" >10.1109/IVNC63480.2024.10652423</a>

Result language
angličtina
Original language name
Simulation of the Electrical Properties of a Graphene Monolayer Field Effect Transistor
Original language description
Field-effect graphene transistors are finding increasing commercial and research applications. Simulation is an important step in facilitating this transition. It contributes to understanding the work process, identifying potential issues and minimizing the cost of production. In this work, the electrical characteristics of back-gated graphene field-effect transistor were simulated using ANSYS electronics software. The output current was studied by applying a voltage difference between the source and drain ranging from -5 mV to 5 mV. The back-gate applied voltage was -50 to 50 V. The results show that the gate voltage induced a similar change in both the contact and channel resistance but did not change the density of mobility of positive and negative carriers
Czech name
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Czech description
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>S - Specificky vyzkum na vysokych skolach

Publication year
2024
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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