X-ray induced electrostatic graphene doping via defect charging in gate dielectric

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F17%3APU123309" target="_blank" >RIV/00216305:26620/17:PU123309 - isvavai.cz</a>
Result on the web
<a href="https://www.nature.com/articles/s41598-017-00673-z" target="_blank" >https://www.nature.com/articles/s41598-017-00673-z</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1038/s41598-017-00673-z" target="_blank" >10.1038/s41598-017-00673-z</a>

Result language
angličtina
Original language name
X-ray induced electrostatic graphene doping via defect charging in gate dielectric
Original language description
Graphene field effect transistors are becoming an integral part of advanced devices. Hence, the advanced strategies for both characterization and tuning of graphene properties are required. Here we show that the X-ray irradiation at the zero applied gate voltage causes very strong negative doping of graphene, which is explained by X-ray radiation induced charging of defects in the gate dielectric. The induced charge can be neutralized and compensated if the graphene device is irradiated by X-rays at a negative gate voltage. Here the charge neutrality point shifts back to zero voltage. The observed phenomenon has strong implications for interpretation of X-ray based measurements of graphene devices as it renders them to significantly altered state. Our results also form a basis for remote X-ray tuning of graphene transport properties and X-ray sensors comprising the graphene/oxide interface as an active layer
Czech name
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Czech description
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Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2017
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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