Mechanism and Suppression of Physisorbed-Water-Caused Hysteresis in Graphene FET Sensors

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F20%3APU139600" target="_blank" >RIV/00216305:26620/20:PU139600 - isvavai.cz</a>
Alternative codes found
RIV/70883521:28110/20:63526184
Result on the web
<a href="https://pubs.acs.org/doi/10.1021/acssensors.0c01441" target="_blank" >https://pubs.acs.org/doi/10.1021/acssensors.0c01441</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1021/acssensors.0c01441" target="_blank" >10.1021/acssensors.0c01441</a>

Result language
angličtina
Original language name
Mechanism and Suppression of Physisorbed-Water-Caused Hysteresis in Graphene FET Sensors
Original language description
Hysteresis is a problem in field-effect transistors (FETs) often caused by defects and charge traps inside a gate isolating (e.g. SiO2) layer. This work shows that graphene-based FETs also exhibit hysteresis due to water physisorbed on top of graphene determined by the relative humidity level, which naturally happens in biosensors and ambient operating sensors. The hysteresis effect is explained by trapping of electrons by physisorbed water, and it is shown that this hysteresis can be suppressed using short pulses of alternating gate voltages.
Czech name
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Czech description
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Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
—
OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2020
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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