Snap-back characteristics tuning of SCR-based semiconductor structures

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F08%3APU73709" target="_blank" >RIV/00216305:26220/08:PU73709 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Snap-back characteristics tuning of SCR-based semiconductor structures

Original language description

Semiconductor structures having snap-back type of I-V characteristics are very useful in ESD (electrostatic discharge) protection design. ESD protection structures act as a protection of integrated circuits against the parasitic electrostatic discharge.The typical protection structure having the snap-back type of I-V characteristic is a SCR (silicon controlled rectifier) or a gate grounded NMOS transistor. This text is dealing with structures which enable tuning of I-V snapback characteristics. The simulated technology was CMOS very high voltage (VHVIC). The measurement was done for samples manufactured in 1.5um BiCMOS.

Czech name

Ladění A/V charakteristik S-typu u polovodičových struktur na bázi tyristoru

Czech description

Článek popisuje polovodičové struktury na bázi tyristoru, které lze použit v návrhu ESD ochran pro integrované obvody. Popisuje jakým způsobem lze tyto struktury ladit pomozí rozměrů layoutu tak, aby se patřičně měnili napěťové úrovně A/V charakteristikS-typu.

Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

JA - Electronics and optoelectronics

OECD FORD branch

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Project

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Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2008

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

WSEAS Transactions on Electronics

ISSN

1109-9445

e-ISSN

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Volume of the periodical

4

Issue of the periodical within the volume

9

Country of publishing house

US - UNITED STATES

Number of pages

6

Pages from-to

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UT code for WoS article

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EID of the result in the Scopus database

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