Variable Lateral Silicon Controlled Rectifier as an ESD Protection
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F08%3APU78861" target="_blank" >RIV/00216305:26220/08:PU78861 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Variable Lateral Silicon Controlled Rectifier as an ESD Protection
Original language description
The Variable lateral Silicon Controlled Rectifier (VLSCR) is a SCR based structure with the possibility to tune I-V snapback characteristics. This effect is important for an ESD (electrostatic discharge) protection design. The ESD protection structures act as a protection of integrated circuits against parasitic electrostatic discharge. Among often used structures belong structures having snapback type of I-V characteristic. Typical is a gate-grounded NMOS transistor [3] or a SCR [3]. This text is dealing with the VLSCR structure which enables I-V snap-back characteristics tuning according to the application demand. Simulated technology was CMOS very high voltage (VHV Integrated Circuits). Measurement was done in BiCMOS process.
Czech name
Variabilni horizontalni tyristor jako ESD ochrana
Czech description
Vysledne A/V chovani VLSCR tyristoru je definovano klicovymi geometrickymi parametry masky. Clanek definuje strukturu VLSCR, demonstruje vlastnosti na TCAD simulacich a ukazuje vysledky mereni.
Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
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Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2008
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
WSEAS Transactions on Electronics
ISSN
1109-9445
e-ISSN
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Volume of the periodical
5
Issue of the periodical within the volume
8
Country of publishing house
US - UNITED STATES
Number of pages
10
Pages from-to
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UT code for WoS article
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EID of the result in the Scopus database
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