SCR I-V Characteristics tuning for applications of ESD protections
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F08%3APU74140" target="_blank" >RIV/00216305:26220/08:PU74140 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
SCR I-V Characteristics tuning for applications of ESD protections
Original language description
The ESD (electrostatic discharge) protection structures act as a protection of integrated circuits against parasitic electrostatic discharge. The ESD protections are located between IC`s pins. The use of such structures provides ICs robustness against anESD event. Among often used structures belong structures having snapback type of I-V characteristic. Typical is a SCR (silicon controlled rectifier) or a gate grounded NMOS transistor. This text is dealing with some structures which enable tuning of snapback characteristics. Simulated technology was CMOS very high voltage (VHVIC).
Czech name
Ladění tyristorových A/V charakteristik S-typu pro aplikaci ESD ochran v IO
Czech description
Ladění tyristorových A/V charakteristik S-typu pro aplikaci ESD ochran v IO.
Classification
Type
D - Article in proceedings
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
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Continuities
S - Specificky vyzkum na vysokych skolach
Others
Publication year
2008
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Proceedings of the 14th conference Student EEICT 2008
ISBN
978-80-214-3617-6
ISSN
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e-ISSN
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Number of pages
5
Pages from-to
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Publisher name
Ing.Zdeněk Novotný, CSc. , Ondráčkova 105, Brno
Place of publication
Neuveden
Event location
FEKT VUT v Brně
Event date
Apr 24, 2008
Type of event by nationality
CST - Celostátní akce
UT code for WoS article
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